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Thyristor Module

Three kinds of electrodes with which thyristor is made are an anode, a cathode and a gate and its function is similar to that of a transistor. It is used for controlling the alternating currents such as in the devices that uses a switch. With the help of a small device, it can control voltage and power of large amount. Due to this, it is used to control electric power that ranges from electric motor speed to transmission of high voltage power.


States involved in the working of thyristor are mentioned below:

 

  • Reverse blocking mode: Diode blocks the applied voltage in a particular direction
  • Forward blocking mode: Diode is conducted when the voltage is applied, however, thyristor does not get triggered
  • Forward conducting mode: Thyristor gets triggered and keep conducting till a threshold value occurs and the forward current is dropped below it.
IGBT Module Supply
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IGBT Module Supply
MD1422
IGBT Module Supply has the attributes of both power MOSFET and BJT devices so it has the optimal device characteristics. Two IJBTs are connected to each transistor in a half-bridge configuration. The heat sinking base plate is isolated from all the components and interconnects which makes system assembly simple. It has low saturation voltage and operates under high frequency. It finds application in AC drive invert, UPS, and welding power supplies.
IXYS Semiconductor
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IXYS Semiconductor
MCD224-22io1
IXYS Semiconductor is used for amplification, switching, and energy conversion. It can pass current unidirectionally and is sensitive to light or heat. It is utilized for making various kinds of electronic devices including diodes, transistors, optical sensors, light-emitters, solid-state lasers, and integrated circuits. This semiconductor is highly compact, reliable, power efficient, and available at low cost. It has direct or indirect band gap and can emit photon upon excitation by necessary wavelength.
IXYs IGBT Module
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IXYs IGBT Module
VUO121-16NO1 module
IXYS IGBT Module is mainly used as an electronic switch and has very high efficiency. It has no effect of latchup & secondary breakdown and does not burn out at very high currents. The module is suitable for applications where the switching frequencies are above 20 kHz. It has a high power density, low switching loss, short circuit capability and is minimum parasitic. It can work seamlessly in a wide temperature range from -40°C to 150°C.
IXYS IGBT MODULE MCC95-16IO1B
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IXYS IGBT MODULE MCC95-16IO1B
MCC95-16IO1B
IXYS IGBT MODULE MCC95-16IO1B is a discrete semiconductor module and has a screw mounting style. The minimum forward Vf voltage required is 1.5V and maximum is 1600V. It operates a wide range of temperature from -40°C to 125°C and has very low saturation voltage. The Gate trigger current is 150mA and the maximum holding current is 200mA. This module comes with a 1-Phase controller and can operate at high frequencies.
IXYS Module MCD162-16i01
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IXYS Module MCD162-16i01
MCD162-16i01
IXYS Module MCD162-16i01 is manufactured using direct copper bonded Al2O3-ceramic which gives it a long-term stability. It has a thyristor for line frequency and the chip is of planar passivated type. The base plate is made of DCB ceramic and the module comes with soldering pins for PCB mounting. It finds application in soft start AC & DC motor control and power converters. It is also utilized in lighting & temperature control and AC power control.
RF POWER MODULE
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RF POWER MODULE
VUO110-16N07
RF POWER MODULE converts a low-power radio frequency (RF) signal into a higher power signal. It is available in different classes such as class A, class B, class C, and class E and has Push/Pull topology. It is mainly used for driving transmitter antenna, weather sensing, and voice & data communication. The module is designed for High-Frequency Band and supports AM, CCW, and SSB operating modes. It has an idle current of 500mA.
Semiconductor Rectifier Module
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Semiconductor Rectifier Module
VUO25-16N08
Semiconductor Rectifier Module is made from two different doped semiconductor materials. It has numerous applications including isolation, switching, biasing, controlling, signal processing, and level shifting. Its main purpose is to conduct current preferentially and stop the current flow in opposite direction. The module is designed to rectify and control the power of devices and manage the thermal conductivity with high efficiency. It provides highest performance rate due to its sturdy and reliable design.
Power Module VUO62-12No7
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Power Module VUO62-12No7
VUO62-12No7
Power Module VUO62-12No7 provides high commutation speed and good efficiency at low voltages. It is basically used to cool down devices and connect the outer circuit. The module is utilized in power supplies, DC to DC converters and low voltage motor controllers. It can convert a voltage source into a lower regulated voltage and can handle significant power levels. This power module has a rated voltage of 120 V and the supply voltage is 60 A.
Power IGBT Modules MCC95-16i01B
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Power IGBT Modules MCC95-16i01B
MCC95-16i01B
Power IGBT Modules MCC95-16i01B has various applications including controlling of heat, light, and temperature, soft start AC motor controller and DC power control. It has Gate-cathode twin pins for mounting PCB. The module has an isolation voltage of 3600V and the chips are planar & passivated. It can easily be mounted using only two screws and thus saves space and weight. The temperature and power cycling is improved and eliminates the need of protection circuits.  
Power Mosfet Modules MCC250-12I01
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Power Mosfet Modules MCC250-12I01
MCC250-12I01
Power Mosfet Modules MCC250-12I01 is used for different purposes including DC/AC motor control, power converting, and line rectifying 50/60 Hz. The base plate of the module is made from DCB ceramic and soldering pins are provided for PCB mounting. The maximum reverse/forward blocking voltage is 900V in case of non-repetitive and 800V in case of repetitive blocking. It has a total power dissipation of 820W and junction capacitance of 438pF.
IXYS Power Diode Modules MDD95-22N1B
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IXYS Power Diode Modules MDD95-22N1B
MDD95-22N1B
mitsubishi CM1800DY-34S  IGBT module
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mitsubishi CM1800DY-34S IGBT module
CM1800DY-34S
Semikron IGBTs
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Semikron IGBTs
SEMIX353GB 126V1
Fuji GTR Module
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Fuji GTR Module
A50L-0001-0175
Thyristor Module MCC312-16IO1
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Thyristor Module MCC312-16IO1
MCC312-16IO1
three phase bridge rectifier DF150AA160
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three phase bridge rectifier DF150AA160
DF150AA160
EUPEC IGBT POWER MODULE FZ1200R12KF5
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EUPEC IGBT POWER MODULE FZ1200R12KF5
FZ1200R12KF5
MITSUBISHI scr diode module RM50CA-12F
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MITSUBISHI scr diode module RM50CA-12F
RM50CA-12F
thyristor diode module SKT1200/16E
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thyristor diode module SKT1200/16E
SKT1200/16E
scr rectfier module SKKD162/16
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scr rectfier module SKKD162/16
SKKD162/16


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