MIT IGBT MODULE PM200DSA120
1. Igbt Is A Functional Integration Of Power Mosfet And Bjt Devices In Monolithic Form
2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge Configuration With Each Transistor Having A Reverse-Connected Super-Fast Recovery Free-Wheel Diode.
3. All Components And Interconnects Are Isolated From The Heat Sinking Base Plate,Offering Simplified System Assembly.
1. Square Rbsoa
2. Low Saturation Voltage
3. Over Current Limiting Function (3 Times Rated Current)
4. Igbt Is Three-Terminal Power Semiconductor Device
5. High Frequency Operation
1. Ac Drive Invert
3. Ups, Uninterruptible Power Supply
4. Welding Power Supplies
We Supply World Wide Famous Brand Electronic Components. Include:
Packing & shipping
1. We will ship the items within 3 working days after the payment is reached.
2. All the goods will be tested before shipment.
3. Packing in professional anti-static bag.
4. We can ship to you by DHL/TNT/EMS/FedEx.
1. We keep more than 10 thousands Transistors in warehouse, it could cut lead time of most items.
2. Customer service in 1-4 hours.
3. Experienced technical support team.
4. 90 days warranty for all the goods from us.
5. Many supplier with us, we could help you to get any components which is difficult to get.