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DIODE MODULE

We offer diode modules that are electrically isolated and are available in many voltage ratings. The base plates of these are made up of metal and a substrate of DCB Alumina. Because of high level of thermal efficiency, reliable performance and durability are ensured by them. These find usage in bridges, lightning control, motor drives, IGBT circuits, industrial welders and so on. Dual parallel diodes, antiparallel or unconnected pair, bridge rectifier, dual common anode, etc. are some of the attributes due to which our diode modules have received an overwhelming response.


Features


  • Our range involves modules having different kinds of connections
  • Compatible with IGBT and Transistor module
  • In compliance to RoHS directive
EUPEC IGBT Module
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EUPEC IGBT Module
BSM25GD120DN2
EUPEC IGBT Module BSM25GD120DN2 is designed to be used for three phase motor drive inverter, general power switching supplies, converter, SMPS, UPS, servo motors, and welding equipments. It is required for high voltage power applications to assure proper working of machines. This module is highly appreciated for high power density, integrated temperature sensor, low loss, and high level of power integration. It is comprised of a copper made base plate with N channel terminal.  
Infineon Eupec IGBT Module BSM50GD120DN2
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Infineon Eupec IGBT Module BSM50GD120DN2
BSM50GD120DN2
Infineon Eupec IGBT Module BSM50GD120DN2 is used for switching applications in various electronic devices featuring pulse repetition rates within the ultrasonic range. It is comprised of a MOS gate, emitter, p type material, and epitaxial drift region. This module has the characteristics of both gate drive characteristics of MOSFET including low voltage saturation capability of bipolar transistors with high current. It has inbuilt sensors for overheating and under voltage situations.  
EUPEC Igbt Module BSM75GD120DN2
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EUPEC Igbt Module BSM75GD120DN2
BSM75GD120DN2
EUPEC Igbt Module BSM75GD120DN2 is highly appreciated for its ability to provide optimum voltage of power to the installed machines. It is comprised of four alternating layers of PNP bipolar junction which is controlled by MOS gate structure. This module is comprised of insulated gate bipolar transistor chip, capacitors, & resistors sintered or soldered on programmed printed circuit board. It is completely suitable to be utilized for all low to high power voltage applications.  
EUPEC INFENION Thyristor Module
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EUPEC INFENION Thyristor Module
BSM100GB60DLC
EUPEC Infenion Thyristor Module is mainly utilized for the applications where high voltage and high currents are involved. It is also ideal for alternating current using devices where change in polarity of current results in automatic switching off of the device. The operation performed by this module is known as zero cross operation. It is a type of three terminal four layered semiconductor device alternately having p & n type of terminals.
Power IGBT Module BSM150GB60DLC
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Power IGBT Module BSM150GB60DLC
BSM150GB60DLC
Power IGBT Module BSM150GB60DLC is comprised of built in insulated gate bipolar transistor with MOS gate structure. It is used in inverters, motor control, welding devices, and high power direct current transmission systems. This module is also suitable to be utilized for low medium voltage applications. It is known to have excellent efficiency with long lasting operational life. This IGBT module has combined characteristics of MOSFET & BJT.  
GTO MODULE
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GTO MODULE
BSM300GA120DN2
GTO Module is known as current controlled bipolar device which is designed to turn off the device when negative current is passed through the gate. It is comprised of a doped n+ cathode layer with low break down voltage of J3 terminal. This module also consists of anode junction formed by n base & p+ anode. Abbreviated for gate turn off thyristor, it is turned on by high current pulse whereas turned off with negative gate current pulse.
PIM Infineon Module FP40R12KE3
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PIM Infineon Module FP40R12KE3
FP40R12KE3
PIM Infineon Module FP40R12KE3 is completely suitable to be used for controlling motors, medical equipments, inverters, air conditioning systems, and induction heating. It is designed having low stray inductance, high reliability & power density, copper base plate for having optimized heat spread, low switching loss, & solderable pins. Abbreviated for power integrated module, this is greatly admired for is low mounting cost, reliability, and fast operation.  
EUPEC thyristor diode module
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EUPEC thyristor diode module
FP75R12KE3
EUPEC thyristor diode module is designed having a metallic ceramic package with high reverse voltage. It finds its application for industrial machines including motors, battery charging rectifiers, AC temperature control, free-wheeling diodes, and high power drives. This module is comprised of an isolated aluminum base plate to assure its simple structure and reliable performance. It can also be used in soft starters for induction motors.
power switching transistor
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power switching transistor
FF300R12KE3
Infineon Power Modules FS300R12KE3
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Infineon Power Modules FS300R12KE3
FS300R12KE3
PLC FZ120012KF5 IGBT Module
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PLC FZ120012KF5 IGBT Module
FZ120012KF5 IGBT
Eupec Thyristor Module
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Eupec Thyristor Module
FZ400R12KS4
FG4000GX90AD Power Diodes
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FG4000GX90AD Power Diodes
FG4000GX90AD
Eupec Mosfet FP15R12YT3
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Eupec Mosfet FP15R12YT3
FP15R12YT3
Eupec Power Module FP75R12KT4-B15
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Eupec Power Module FP75R12KT4-B15
FP75R12KT4-B15
EUPEC IGBT Module FZ1200R12KL4C
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EUPEC IGBT Module FZ1200R12KL4C
FZ1200R12KL4C


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