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TOSHIBA IGBT Module

 

We offer a wide variety of Toshiba modules that include transistors, diodes, semiconductors that are applicable in various industries such as chemical, electical, electronic, etc. All the components of our modules ensures excellent switching between the connections at a faster speed. Since the switching made is not mechanical or physical, therefore, operation life is quite higher than the relays. It has a voltage of low saturation. The current limiting funtion is thrice the actual rated current. Operations are performed at relatively higher frequency. To ensure a higher level of isolation between both the ends- input and output, our range is combined with several optical isolators.


Applications


  • Our Toshiba Module find usage in the following applications:
  • Control
  • Power Supplies for welding
  • UPS (Uninterruptible Power Supply)
  • Ac Drive Invert

Toshiba IGBT Module MG50Q6ES41
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Toshiba IGBT Module MG50Q6ES41
MG50Q6ES41
Toshiba IGBT Module MG50Q6ES41is extensively used in high power switching and motor control applications. It has 6 IGBTs built into a single package due to which it has a high-speed operation. The electrodes are separated from the outer case to provide better insulation. It has a maximum forward DC/collector current of 50A. The highest power dissipation of collector at 25°C is 250W. It operates under a temperature range of -40°C to 125°C. 
Bipolar IGBT Transistor
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Bipolar IGBT Transistor
MG200J2YS50
Bipolar IGBT Transistor consists of three terminals namely emitter, collector, and gate with a bipolar current carrying capacity. It is mainly used to increase the efficiency and performance and also to reduce the audible noise level. This transistor is famous for its rapid switching time, low resistance, and high input impedance. It is also utilized in amplifier circuits such as MOSFETs or BJTs and resonant-mode converter circuits. The transistor is integrated with a FET in Darlington type configuration.  
IGBT Gate Drivers
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IGBT Gate Drivers
MG400Q1US21
IGBT Gate Drivers are helpful in improving the reliability and efficiency of systems due to their negative gate drive capability. They solve the problem of both single channel and dual channel. These drivers are greatly used in motor drives, isolated power supplies, smart grid infrastructure, and numerous industrial applications. They generate voltage and current level that is required to activate the power stage in industrial, consumer, computer and automotive applications.
Toshiba IGBT Elevator Module
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Toshiba IGBT Elevator Module
MG150Q2YS1
Toshiba IGBT Elevator Module is mainly used in the elevator circuit as a switching component. It has a very good thermal resistant and operates at high frequency. The module is easy to install and improves the heat dissipation of devices. It is made up of high-grade silicon carbide material which can be used as an energy efficient power device. It can operate seamlessly at very high temperatures and helps reduce power loss.  
TOSHIBA IPM IGBT Module
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TOSHIBA IPM IGBT Module
MG100J2YS50
TOSHIBA IPM IGBT Module is ideal for high-speed switching drive. It is manufactured using quality grade silicone material and has a bootstrap diode embedded in it because of which there is an increased level of reliability. The module is well-known for its low saturation voltage, high frequency operation, and over current limiting function. It can be used in different areas including power supply, AC current drive inert and control functions.
Toshiba GTR Module
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Toshiba GTR Module
MG75H6EL1
Toshiba GTR Module provides safety & protection against over speed, low oil pressure, emergency stop, and high water temperature. It has three different operation modes namely manual, auto, and off mode. This module has an LCD screen attached to it which displays the running status, power status, and low battery voltage warning. It has 10 soldering pins to adjust different parameters according to requirements. The module comes up with enhancement mode and includes a complete half bridge in one package.
TOSHIBA Thyristor Module
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TOSHIBA Thyristor Module
MG25J6ES40
TOSHIBA Thyristor Module finds application for welding, direct current (DC) motor control, static switches, and electric furnace temperature control. It has the ability to apply a pulse current to a gate current for the purpose of turning. It is manufactured using high-quality silicon or germanium which has 4 layers of alternating n and p-type materials. The module is encapsulated and the base plate is electrically insulated which ensures long working lifetime.
MITSUBISHI IGBT Module CM1400DU-24NF
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MITSUBISHI IGBT Module CM1400DU-24NF
CM1400DU-24NF
MITSUBISHI IGBT Module CM1400DU-24NF is used in AC drive inverters, servo control, Uninterruptible Power Supply (UPS), and welding power supplies. It has a square reverse biased safe operating area (RBSOA) and low saturation voltage. The system assembly is very simple because all the interconnected components are isolated from the heat sinking base plate. It combines both the attributes of MOSFET and BJT devices. Every module in the transistor consists of 2 IGBTs.
TOSHIBA RF Transistor mg400h1fl1
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TOSHIBA RF Transistor mg400h1fl1
mg400h1fl1
TOSHIBA RF Transistor mg400h1fl1 is designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. It is manufactures using silicon or germanium materials and doped with impurities to induce changes in electrical properties. This module has a good power gain and noise figure which gives a measure of the amount of noise added during operation. It is Pb-free and available in different packaging types such as cut tape and mouse reel.
TOSHIBA Bridge Rectifier Transistors
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TOSHIBA Bridge Rectifier Transistors
MG300J2YS40
TOSHIBA Bridge Rectifier Transistors exploit the “gain reversal” phenomenon shown by a saturated bipolar transistor. These rectifiers find application as a signal-level detector (AGC detector). A PNP transistor will provide rectification for positive half cycle whereas an NPN transistor will give rectification of negative half cycle. They can also be used as an amplifier or a switch. The transistors are specially designed to build a diode or rectify low AC current with a voltage drop of 0.03V.
IGBT Power Switching Modules
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IGBT Power Switching Modules
MG50J6ES40
IGBT Power Switching Modules comprises of several components including controlled silicon, frd, bridge rectifier, IGBT absorption capacitor, PFC capacitor, and aluminum electrolytic capacitor. They are widely utilized as switching elements for power converters, inverters, transportation, and uninterruptible power supplies. They have switching voltage of up to 30V. These transistors operate in two regions known as the saturation region and the cut-off region and are used to switch a low voltage DC device ON or OFF.
IGBT 6MBP150RTA060
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IGBT 6MBP150RTA060
6MBP150RTA060
TOSHIBA Igbt Rectifier MG20G6El1
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TOSHIBA Igbt Rectifier MG20G6El1
MG20G6El1
TOSHIBA Rectifiers Module MG25Q2YS40
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TOSHIBA Rectifiers Module MG25Q2YS40
MG25Q2YS40
MG400Q1US1 power module
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MG400Q1US1 power module
MG400Q1US1
power rectifier diode module
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power rectifier diode module
MG300H1FL1
thyristor controlled rectifier
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thyristor controlled rectifier
MG30V1BS41
Toshiba Power Module MG50J6ES50
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Toshiba Power Module MG50J6ES50
MG50J6ES50
TOSHIBA RF Transistor MG75J2YS50
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TOSHIBA RF Transistor MG75J2YS50
MG75J2YS50
PIM Power Module MG75Q1BS11
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PIM Power Module MG75Q1BS11
MG75Q1BS11
Toshiba IGBT Module MG15G6EL1
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Toshiba IGBT Module MG15G6EL1
MG15G6EL1
mg300q1us1 Electronic Igbt Module
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mg300q1us1 Electronic Igbt Module
mg300q1us1
TOSHIBA IGBT & Thyristors Module
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TOSHIBA IGBT & Thyristors Module
MG500Q1US1
MG800J1US51 power mosfet thyristor module
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MG800J1US51 power mosfet thyristor module
MG800J1US51
MIG30J103H toshiba igbts
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MIG30J103H toshiba igbts
MIG30J103H
Toshiba Diodes MIG75J7CSB1W
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Toshiba Diodes MIG75J7CSB1W
MIG75J7CSB1W
TOSHIBA IGBT Module MG100J6ES52
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TOSHIBA IGBT Module MG100J6ES52
PM100DSA120
SCR IGBT Module MG200J2YS50
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SCR IGBT Module MG200J2YS50
MG200J2YS50
Power Mosfet Toshiba module
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Power Mosfet Toshiba module
MG15G1AL3
Transistor Modules MG75Q2YS1
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Transistor Modules MG75Q2YS1
MG75Q2YS1
TOSHIBA IGBT transistors
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TOSHIBA IGBT transistors
MG100J1BS11
TOSHIBA IGBT-Modules MG400Q1US41
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TOSHIBA IGBT-Modules MG400Q1US41
MG400Q1US41
TOSHIBA Power Thyristor Module
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TOSHIBA Power Thyristor Module
MG600Q1US59A
TOSHIBA IGBT modules
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TOSHIBA IGBT modules
MIG20J503H
TOSHIBA IGBT Module is applicable in variable speed motor drives and continuous power supplies for computers. It is helpful in reducing energy requirements and weight of devices due to which its demand is increasing at a heavy rate. The module is used for several purposes including high-speed voltage switching, gate voltage control of a power Mosfet and large current handling capacity of a bipolar transistor. It has high sturdiness and reliability so it has very long working lifespan.
igbt transistor mg75j6es50
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igbt transistor mg75j6es50
mg75j6es50
MITSUBISHI IGBT MODULES PM800HSA120
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MITSUBISHI IGBT MODULES PM800HSA120
PM800HSA120
IGBT driver module toshiba MG50Q6ES50A
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IGBT driver module toshiba MG50Q6ES50A
MG50Q6ES50A
toshiba MIG50Q7CSB1X
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toshiba MIG50Q7CSB1X
MIG50Q7CSB1X


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