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IGBT Power Transistor
IGBT Power Transistor is a voltage-controlled device that only needs low amount of voltage on the Gate to carry out the conduction. This is a unidirectional device that can only switch current in one direction from Collector to Emitter. It is designed to ensure high voltage capacity with low ON-resistance as well as ease of drive. It ensures relatively fast switching speed with no gate drive current. This proety makes it ideal to be used for moderate speed as well as high voltage applications.
Features of IGBT Power Transistor:
- Simple gate-drive characteristics
- Ensures high-current as well as low-saturation-voltage capability
- Ideal for medium- to high-power applications
- Able to handle high current of hundreds of amperes
Applications of IGBT Power Transistor:
- Switch-mode power supplies
- Solar powered DC-AC inverter
- Frequency converter
1. Igbt Is A Functional Integration Of Power Mosfet And Bjt Devices In Monolithic Form
2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge Configuration With Each Transistor Having A Reverse-Connected Super-Fast Recovery Free-Wheel Diode.
3. All Components And Interconnects Are Isolated From The Heat Sinking Base Plate,Offering Simplified System Assembly.
1. Square Rbsoa
2. Low Saturation Voltage
3. Over Current Limiting Function (3 Times Rated Current)
4. Igbt Is Three-Terminal Power Semiconductor Device
5. High Frequency Operation
1. Ac Drive Invert
3. Ups, Uninterruptible Power Supply
4. Welding Power Supplies
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